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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N4036/D General Purpose Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N4036 2N4037 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Base Current Collector Current -- Continuous Continuous Power Dissipation at or Below TC = 25C Linear Derating Factor Continuous Power Dissipation at or Below TA = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature 1/16 from Case for 10 Seconds Symbol VCEO VCBO VEBO IB IC PD 5.0 28.6 PD 1.0 5.72 TJ, Tstg TL 1.0 5.72 Watts mW/C C C 5.0 28.6 Watts mW/C 2N4036 - 65 - 90 - 7.0 - 0.5 - 1.0 2N4037 - 40 - 60 - 7.0 Unit Vdc Vdc Vdc Adc Adc 3 2 1 CASE 79-04, STYLE 1 TO-39 (TO-205AD) - 65 to +200 230 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RqJC 2N4036 35 2N4037 35 Unit C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage(1) (IC = - 100 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = - 0.1 mAdc) Collector Cutoff Current (VCE = - 85 Vdc, VEB = - 1.5 Vdc) (VCE = - 30 Vdc, VEB = - 1.5 Vdc, TC = 150C) Collector Cutoff Current (VCB = - 90 Vdc, IE = 0) (VCB = - 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = - 7.0 Vdc, IC = 0) (VEB = - 5.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width VCEO(sus) 2N4036 2N4037 V(BR)CBO 2N4037 ICEX 2N4036 2N4037 ICBO 2N4036 2N4037 IEBO 2N4036 2N4037 -- -- - 10 - 1.0 -- -- - 1.0 - 0.25 Adc -- -- - 0.1 - 100 Adc mAdc - 65 - 40 - 60 -- -- -- Vdc Vdc v 300 ms, Duty Cycle v 2.0%. Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1997 1 2N4036 2N4037 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = - 0.1 mAdc, VCE = -10 Vdc) (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -150 mAdc, VCE = -10 Vdc)(1) (IC = -150 mAdc, VCE = - 2.0 Vdc)(1) (IC = - 500 mAdc, VCE = -10 Vdc)(1) Collector - Emitter Saturation Voltage(1) (IC = - 150 mAdc, IB = - 15 mAdc) Base - Emitter Saturation Voltage(1) (IC = - 150 mAdc, IB = - 15 mAdc) Base - Emitter On Voltage(1) (IC = - 150 mAdc, VCE = - 10 Vdc) hFE 2N4036 2N4037 2N4036 2N4037 2N4036 2N4036 2N4036 2N4037 2N4036 VBE(on) 2N4037 -- - 1.5 Vdc VCE(sat) VBE(sat) 20 15 40 50 20 20 -- -- -- -- -- 140 250 200 -- - 0.65 - 1.4 -1.4 Vdc Vdc -- SMALL- SIGNAL CHARACTERISTICS Collector-Base Capacitance (VCB = - 10 Vdc, f = 1.0 MHz) Current Gain -- High Frequency (IC = - 50 mAdc, VCE = - 10 Vdc, f = 20 MHz) Ccb 2N4037 2N4036 2N4037 |hfe| 3.0 3.0 -- 10 -- -- 30 pF SWITCHING CHARACTERISTICS Rise Time (IB1 = - 15 mAdc) Storage Time (IB2 = - 15 mAdc) Fall Time (IB2 = - 15 mAdc) Turn-On Time (IB1 = IB2) Turn-Off Time (IB1 = IB2) 1. Pulse Test: Pulse Width tr 2N4036 ts 2N4036 tf 2N4036 ton 2N4036 toff -- 700 ns 2N4036 -- 110 ns -- 100 ns -- 600 ns -- 70 ns v 300 ms, Duty Cycle v 2.0%. 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data 2N4036 2N4037 PT, MAXIMUM TRANSISTOR DISSIPATION (W) 10 hFE , NORMALIZED DC CURRENT GAIN 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 - 75 (AT TC) (AT TA) VCE = - 10 V 1.0 AMBIENT TEMPERATURE (TA) = 25C 0.1 - 0.1 - 1.0 - 10 IC, COLLECTOR CURRENT (mA) - 100 - 25 0 50 100 150 200 CASE OR AMBIENT TEMPERATURE (TC OR TA) - C Figure 1. Current Gain Characteristics versus Collector-Emitter Voltage Figure 2. Dissipation Derating Curve I CBO , COLLECTOR CUTOFF CURRENT (mA) -10- 6 -10- 7 -10- 8 -10- 9 -10-10 IC, COLLECTOR CURRENT (mA) -10- 5 COLLECTOR-TO-BASE VOLTAGE - 40 V - 20 V COLLECTOR CURRENT (IC) = 10 BASE CURRENT (IB) - 600 AMBIENT TEMPERATURE (TA) = 25C - 400 - 200 0 25 50 75 100 125 150 175 200 TJ, JUNCTION TEMPERATURE (C) 0 - 0.5 - 0.15 - 0.25 - 0.35 VCE(sat), COLLECTOR-TO-EMITTER SATURATION VOLTAGE (V) Figure 3. Typical Collector-Cutoff Current versus Junction Temperature Figure 4. Typical Saturation-Voltage Characteristics hFE, SMALL-SIGNAL FORWARD CURRENT TRANSFER RATIO 10 8.0 6.0 4.0 2.0 0 IC, COLLECTOR CURRENT (A) COLLECTOR-TO-EMITTER VOLTAGE (VCE) = -10 V FREQUENCY = 20 MHz AMBIENT TEMPERATURE (TA) = 25C 1.0 IC MAX. (CONTINUOUS) - 0.1 50 s 100 s 300 s 500 s 1.0 ms DC OPERATION PULSED OPERATION* 9.3 7.0 5.0 3.0 2.0 1.0 NORMALIZED POWER MULTIPLIER CASE TEMPERATURE (TC) = 25C (CURVES MUST BE DERATED LINEARLY WITH INCREASE OF TEMPERATURE) VCEO MAX = 40 V (2N4037) - 0.01 - 1.0 VCEO MAX = - 65 V (2N4036) *FOR SINGLE NONREPETITIVE PULSE - 1.0 - 10 - 100 - 1000 IC, COLLECTOR CURRENT (mA) - 100 - 10 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) Figure 5. Typical Small-Signal Beta Characteristics Figure 6. Maximum Safe Operating Areas (SOA) Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 2N4036 2N4037 PACKAGE DIMENSIONS R -A- B C SEATING PLANE -T- E F P D 3 PL 0.36 (0.014) L K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION J MEASURED FROM DIMENSION A MAXIMUM. 4. DIMENSION B SHALL NOT VARY MORE THAN 0.25 (0.010) IN ZONE R. THIS ZONE CONTROLLED FOR AUTOMATIC HANDLING. 5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. DIMENSION D APPLIES BETWEEN DIMENSION L AND K MINIMUM. LEAD DIAMETER IS UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D E F G H J K L M P R INCHES MIN MAX 0.335 0.370 0.305 0.335 0.240 0.260 0.016 0.021 0.009 0.041 0.016 0.019 0.200 BSC 0.028 0.034 0.029 0.045 0.500 0.750 0.250 --- 45 _BSC --- 0.050 0.100 --- MILLIMETERS MIN MAX 8.51 9.39 7.75 8.50 6.10 6.60 0.41 0.53 0.23 1.04 0.41 0.48 5.08 BSC 0.72 0.86 0.74 1.14 12.70 19.05 6.35 --- 45 _BSC --- 1.27 2.54 --- M TA M H M -H- 1 2 3 G STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR M J CASE 079-04 (TO-205AD) ISSUE N Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 81-3-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 4 2N4036/D Motorola Small-Signal Transistors, FETs and Diodes Device Data |
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